Part Number Hot Search : 
X5169PIZ 2SD14 H838099 PT801 R31681 74HC4852 X5169PIZ M1389
Product Description
Full Text Search
 

To Download FMS6G10US60 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 FMS6G10US60 Compact & Complex Module
August 2005
FMS6G10US60
Compact & Complex Module
Features
* Short Circuit Rated 10s @ TC = 100C, VGE = 15V * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 10A * High Input Impedance * Built-in 3 Phase Rectifier Circuit * Fast & Soft Anti-Parallel FWD * Built-in NTC Thermistor
Description
Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control and general inverters where short-circuit ruggedness is required.
Applications
* AC & DC Motor Controls * General Purpose Inverters * Robotics * Servo Controls * UPS
4
5 19 17
21 22 23 24
20
18 13
16 14 15
8 9 3 6 7 NTC 11
10
12
Package Code : 25PM-AA
Internal Circuit Diagram
(c)2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMS6G10US60 Rev. B1
FMS6G10US60 Compact & Complex Module
Absolute Maximum Ratings
Symbol
Inverter VCES VGES IC ICM (1) IF IFM PD TSC Converter VRRM IO IFSM I2t Common TJ TSTG VISO Mounting Torque
Notes :
TC = 25C unless otherwise noted
Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive Energy pulse @ 1Cycle at 60Hz Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4 @ TC = 25C @ TC = 100C @ TC = 80C @ TC = 80C
FMS6G10US60
600 20 10 20 10 20 66 10 1600 10 100 42 -40 to +150 -40 to +125 2500 2.0
Units
V V A A A A W s V A A A2 s C C V N*m
(1) Repetitive rating : Pulse width limited by max. junction temperature
Package Marking and Ordering Information
Device Marking
FMS6G10US60
Device
FMS6G10US60
Package
25PM-AA
Reel Size
--
Tape Width
--
Quantity
--
(2) TMC2 Relibility test was done under -45C ~ 125C
FMS6G10US60 Rev. B1
2
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
Electrical Characteristics of IGBT @ Inverter
Symbol
Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250A VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 ----
-0.6 ---
--250 100
V V/C A nA
On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 10mA, VCE = VGE IC = 10A, VGE = 15V 5.0 -6.5 2.1 8.5 2.7 V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---710 57 12 ---pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, VGE = 15V @ TC = 100C VCE = 300 V, IC = 10A, VGE = 15V VCC = 300 V, IC = 10A, RG = 20, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, IC = 10A, RG = 20, VGE = 15V, Inductive Load, TC = 25C ------------10 ---65 65 80 100 0.15 0.2 70 60 90 200 0.16 0.3 -35 8 12 130 130 160 200 --140 120 180 350 ---50 15 20 ns ns ns ns mJ mJ ns ns ns ns mJ mJ s nC nC nC
FMS6G10US60 Rev. B1
3
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
Electrical Characteristics of DIODE @ Inverter
Symbol
VFM trr Irr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
Test Conditions
IF = 10A IF = 10A di / dt = 20 A/s TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C
Min.
---------
Typ.
1.9 2.0 85 110 0.7 1.0 30 55
Max.
2.8 -150 -1.4 -105 --
Units
V ns A nC
Electrical Characteristics of DIODE @ Converter T
Symbol
VFM IRRM
C
= 25C unless otherwise noted
Parameter
Diode Forward Voltage Repetitive Reverse Current
Test Conditions
IF = 10A VR = VRRM TC = 25C TC = 100C TC = 25C TC = 100C
Min.
-----
Typ.
1.1 1.0 -5
Max.
1.5 -8 --
Units
V mA
Thermal Characteristics
Symbol
Inverter Converter Weight RJC RJC RJC
Parameter
Junction-to-Case (IGBT Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Weight of Module
Typ.
---60
Max.
1.9 2.9 2.5 --
Units
C/W C/W C/W g
NTC Thermistor Characteristics
Symbol
Thermistor R25 B(25/100) B - Value
Parameter
Rated Resistance @ TC = 25C
Tol.
+/- 5 % +/- 3 %
Typ.
4.7 3530
Units
K
FMS6G10US60 Rev. B1
4
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
40 35 30
Common Emitter TC = 25 C
o
Figure 2. Typical Saturation Voltage Characteristics
30
Common Emitter VGE = 15 V TC = 25 TC = 125 ------
20 V
15 V 12 V
25
[A]
[A]
25 20 15 V
GE
20 15 10 5 0
C
C o ll e c t o r C u r r e n t , I
= 10 V
10 5 0 0 2 4 6
CE
8
C o ll e c t o r C u r r e n t , I
C
1
10
CE
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level
4.0 3.5 3.0 2.5 10 A 2.0 1.5 1.0 -50 0 50
C
Figure 4. Transient Thermal Impedance
10
C E (s a t)
Common Emitter VGE = 15 V
[V]
20 A
Thermal Response, Zthjc [/W]
FRD
1
C o ll e c t o r - E m it t e r V o lt a g e , V
IG BT
0.1
I
C
=5A
Sin gle P uls e (T h er m al R e s p o n s e)
0.01 10
-5 -4 -3 -2 -1 0 1
100
150
C ase T e m p erature, T
[oC ]
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 5. Saturation Voltage vs. VGE
20
Common Emitter TC = 25
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter TC = 125
[V]
C E ( s a t)
C o ll e c t o r - E m itt e r V o lt a g e , V
12
C o ll e c t o r - E m itt e r V o lt a g e , V
C E ( s a t)
16
[V]
16
12
8
8
4 I
C
= 5A
10A
20A
4 I
C
10A = 5A
20A
0 0 4 8 12
GE
0 0 4 8 12
GE
16
20
16
20
G a t e - E m itt e r V o lt a g e , V
[V]
G a t e - E m itt e r V o lt a g e , V
[V]
FMS6G10US60 Rev. B1
5
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
1600 1400 1200 Cie s
Common Emitter VGE = 0 V, f = 1 MHz TC = 25 C
o
(Continued)
Figure 8. Turn-On Characteristics vs. Gate Resistance
1000
Common Emitter VCC = 300 V, VGE = 15 V IC = 10 A TC = 25 TC = 125 ------
C a p a c it a n c e [ p F ]
1000 800 600 400 200 0 0.1
S w it c h i n g T i m e [ n s ]
Coes
Ton
Cres
100
Tr
1
10
CE
20
40
60
80
100
G
120
140
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
G ate R e sista n c e, R
[
]
Figure 9. Turn-Off Characteristics vs. Gate Resistance
Common Emitter VCC = 300 V, VGE = 15 V IC = 10 A TC = 25 TC = 125 ------
Figure 10. Switching Loss vs. Gate Resistance
1000
1000
S w it c h i n g T i m e [ n s ]
S w it c h i n g l o s s [ u J ]
Common Emitter VCC = 300 V, VGE = 15 V IC = 10 A TC = 25 TC = 125 ------
E o ff Eon E o ff 100
T o ff Tf 100 Tf
20
40
60
80
100
G
120
140
20
40
60
80
100
G
120
140
G ate R e sista n c e, R
[
]
G ate R e sista n c e, R
[
]
Figure 11. Turn-On Characteristics vs. Collector Current
Common Emitter VGE = 15 V, RG = 20 TC = 25 TC = 125 ------
Figure 12. Turn-Off Characteristics vs. Collector Current
Common Emitter VGE = 15 V, RG = 20 TC = 25 TC = 125 ------
1000
1000
S w it c h i n g T i m e [ n s ]
S w it c h i n g T i m e [ n s ]
Ton 100 Tr
T o ff Tf T o ff 100 Tf
5
10
15
C
20
5
10
15
C
20
C o ll e c t o r C u r r e n t , I
[A]
C o ll e c t o r C u r r e n t , I
[A]
FMS6G10US60 Rev. B1
6
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Common Emitter VGE = 15 V, RG = 20 TC = 25 TC = 125 ------
Figure 14. Gate Charge Characteristics
15 V = 100 V
CC
[V]
12
Common Emitter RL = 30 TC = 25 C
o
300 V 200 V
S w it c h i n g L o s s [ u J ]
G a t e - E m itt e r V o lt a g e , V
1000
GE
E o ff Eon E o ff
9
6
100
3
0 5 10 15
C
20
0
5
10
15
20
g
25
30
35
40
C o ll e c t o r C u r r e n t , I
[A]
G ate C h arg e, Q
[nC]
Figure 15. SOA Characteristics
100
Figure 16. RBSOA Characteristics
50
IC MAX. (Pulsed)
[A]
10
C
100us 1ms
C o ll e c t o r C u r r e n t , I
1
DC Operation
Collector Current, I
C
[A]
IC MAX. (Continuous)
50us
10
1
0.1
0.01 0.1
Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature
1
10
100
1000
0.1
Single Nonrepetitive Pulse TJ 125 VGE = 15V RG = 20 0 100 200 300 400 500 600 700
C o ll e c t o r - E m it t e r
V o lt a g e , V
CE
[V]
Collector-Emitter Voltage, VCE [V]
Figure 17. Forward Characteristics
40 35 30 25 20 15 10 5 0 0 1 2 3 4 Common Cathode VGE = 0V T C = 25 T C = 125
Figure 18. Reverse Recovery Characteristics
20
Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [x10ns]
10
T rr
Forward Current, I
F
[A]
1
Irr Common Cathode di/dt = 20A/ T C = 25 T C = 100 ---------
0.1 2 4 6 8 10 12
Forward Voltage, VF [V]
Forward Current, IF [A]
FMS6G10US60 Rev. B1
7
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
Typical Performance Characteristics
(Continued)
Figure 19. Rectifier (Converter) Characteristics
1000 100
Figure 20. Rectifier (Converter) Characteristics
100
In s t a n t a n e o u s F o r w a r d C u rr e n t, I
F
[A]
[uA]
10 1 0.1 0.01 1E-3 0 400 800
R
T
C
= 125
o
C
10
T
C
= 125
o
C 25
o
C
R e v e r s e C u rr e n t, I
R
25
o
C
1
0.1 0.4 0.6 0.8 1.0
F
1200
1600
1.2
1.4
R e v e r s e V o lt a g e , V
[V]
I n s t a n t a n e o u s V o lt a g e , V
[V]
Figure 21. NTC Characteristics
16
12
R e sista n c e, R [ K
8 4 0 0 25 50 75 100 125
]
T e m p erature, T [oC ]
FMS6G10US60 Rev. B1
8
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
Mechanical Dimensions
25PM-AA
-. Pin Coordinate
Pin #No Coordinate x 0.0 -3.0 -6.0 -13.0 -18.0 -25.0 -29.0 -32.0 -35.0 -38.0 -46.5 -49.5 -49.5 -49.5 -49.5 -32.0 -29.0 -23.0 -20.0 -14.0 -11.0 3.5 3.5 3.5 3.5 y 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 11.5 20.0 28.0 28.0 28.0 28.0 28.0 28.0 28.0 28.0 20.0 11.5 5.5
Name Plate
1 2 3
82.2 0.20 4- O6.0 4- O2.0
0.10 Dp
4 5 6
71.0 -0.10 6.0
+0.20
57.0 0.20 2- O4.3 -0.00 Mounting-Hole
+0.20
7 8 9 10 11
15
22
37.9 0.20
17.5 0.20
30.8 -0.10
+0.20
12
1
12
14.00.15
13 14 15 16 17 18 19 20 21
4.30.20 5.1 -0.10
+0.20
O1.00.05
+0.20 16.7 -0.10
4.30.20
23.00.15
21.0 0.20
11.2 -0.10
+0.20
16.3 -0.10
3.2 -0.10
+0.20
+0.20
22 23 24 25
* datum pin : #1 * Pin Tilt : 0.15
Dimensions in Millimeters
FMS6G10US60 Rev. B1
9
www.fairchildsemi.com
FMS6G10US60 Compact & Complex Module
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
10 FMS6G10US60 Rev. B1
www.fairchildsemi.com


▲Up To Search▲   

 
Price & Availability of FMS6G10US60

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X